Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 ≤ x ≤ 0.3) layer

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1062-1068

  Niu, Zhichuan ^a   Wang, Xiaodong ^a   Miao, Zhenhua ^a   Feng, Songlin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Crystal morphology; A1. Quantum dots; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting indium gallium arsenide

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL MORPHOLOGY; EMISSION WAVELENGTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035398178     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00989-7     Document Type: Conference Paper

References (16)