High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 396-398

  Salhi, A ^a   Fortunato, L ^a   Martiradonna, L ^a   Todaro, M T ^a   Cingolani, R ^a   Passaseo, A ^a   De Vittorio, M ^a  

^a NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GAIN CONTROL; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; WAVEGUIDES;

LOW TRANSPARENCY CURRENT DENSITY; MODAL GAIN; WAVEGUIDE THICKNESS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34047193366     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/017     Document Type: Article

References (12)

1. Asada M, Miyamoto Y and Suematsu Y 1986 Gain and the threshold of three dimensional quantum-box lasers IEEE J. Quantam Electron. 22 1915-21
2. Arakawa Y and Sakaki H 1982 Multidimensional quantum well laser and temperature dependence of its threshold current Appl. Phys. Lett. 40 939-41
3. Mikhrin S S et al 2005 High power temperature-insensitive 1.3 νm InAs/InGaAs/GaAs quantum dot lasers Semicond. Sci. Technol. 20 340-42
4. Liu H Y, Childs D T, Badcock T J, Groom K M, Sellers I R, Hopkinson M, Hogg R A, Robbins D J, Mowbray D J and Skolnick M S 2005 High-performance three-layer 1.3-νm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents IEEE Photonics Technol. Lett. 17 1139-41
5. Wilk A, Kovsh A R, Mikhrin S S, Chaix C, Novikov I I, Maximov M V, Shernyakov Yu M, Ustinov V M and Ledentsov N N 2005 High-power 1.3 νm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system J. Cryst. Growth 278 335-41
6. Salhi A, Martiradonna L, Visimberga G, Tasco V, Fortunato L, Todaro M T, Cingolani R, Passaseo A and De Vittorio M 2006 High-modal gain 1300 nm In(Ga)As/GaAs quantum dot lasers IEEE Photonics Technol. Lett. 18 1735-7
7. Ryvkin B S and Avrutin E A 2005 Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes J. Appl. Phys. 97 113106
8. Zhukov A E et al 1999 Gain characteristics of quantum dot injection lasers Semicond. Sci. Technol. 14 118-23
9. Fry P W et al 2000 Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers J. Appl. Phys. 87 615-7
10. Amano T, Sugaya T and Komori K 2006 1.3-νm InAs quantum-dot laser with high dot density and high uniformity IEEE Photonics Technol. Lett. 18 619-21
11. Zhukov A E et al 2003 High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser Physica E 17 589-92
12. -1 signal-regenerative amplifiers J. Phys. D: Appl. Phys. 38 2126-34