Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 6, 2006, Pages 1348-1352

  Chahboun, A ^a,d   Baidus, N V ^a,b   Demina, P B ^b   Zvonkov, B N ^b   Gomes, M J M ^a   Cavaco, A ^c   Sobolev, N A ^c   Carmo, M C ^c   Vasilevskiy, M I ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

INAS SELF-ASSEMBLED QUANTUM DOTS; INAS STRAINED QUANTUM DOTS;

PHOTOLUMINESCENCE; PROTONS; QUENCHING; RADIATION; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646777798     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200566160     Document Type: Conference Paper

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