Molecular rectifying diodes based on an Aluminum/4'-hydroxy-4-biphenyl carboxylic acid/p+-silicon junction

Journal of Physical Chemistry C

Volumn 114, Issue 48, 2010, Pages 20877-20884

  Bala, Sridevi ^a   Aithal, Rajendra K ^a   Derosa, Pedro ^a,b   Janes, David ^c   Kuila, Debasish ^a,d  

^a LOUISIANA TECH UNIVERSITY   (United States)

^b GRAMBLING STATE UNIVERSITY   (United States)

^c Purdue University   (United States)

^d NORTH CAROLINA A AND T STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AROMATIC MOLECULES; BARRIER HEIGHTS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DFT CALCULATION; E BEAM EVAPORATION; END GROUPS; HETEROSTRUCTURES; HIGH VACUUM; HIGHEST OCCUPIED MOLECULAR ORBITAL; IR SPECTRUM; IV CHARACTERISTICS; RECTIFICATION RATIO; RECTIFYING BEHAVIORS; SI DEVICES; SILICON JUNCTION; TOP CONTACT; TURN ON VOLTAGE;

ANGLE MEASUREMENT; CARBOXYLIC ACIDS; CONTACT ANGLE; DENSITY FUNCTIONAL THEORY; DISTILLATION; ELECTRON ENERGY LEVELS; MOLECULAR ORBITALS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; THERMAL EVAPORATION; VACUUM EVAPORATION;

SILICON;

EID: 78650084147     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp107850t     Document Type: Article

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