Phase change memory parameters: Effects of atomic transformations

Proceedings - 2008 9th Annual Non-Volatile Memory Technology Symposium, NVMTS 2008

Volumn , Issue , 2008, Pages

  Karpov, I ^a   Kau, D ^a   Spadini, G ^a   Karpov, V ^b  

^a INTEL CORPORATION   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

Author keywords

Chalcogenide; Drift; Ge 2Sb 2Te 5 (GST); Ovonic unified memory (OUM); Phase change memory (PCM); Threshold switching

Indexed keywords

DRIFT; GE 2SB 2TE 5 (GST); OVONIC UNIFIED MEMORY (OUM); PHASE CHANGE MEMORY (PCM); THRESHOLD SWITCHING;

ATOMS; GERMANIUM; PULSE CODE MODULATION; SYSTEM THEORY; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 78650759135     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2008.4731187     Document Type: Conference Paper

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