메뉴 건너뛰기




Volumn 43, Issue 1, 2010, Pages 515-520

Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diode

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTACT; BARRIER HEIGHTS; COMPARISON STUDY; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; IDEALITY FACTORS; INTERFACIAL LAYER; RECTIFYING PROPERTIES; REVERSE-SATURATION CURRENTS; RICHARDSON PLOT; ROOM TEMPERATURE; SCHOTTKY DIODES; SERIES RESISTANCES; TEMPERATURE RANGE;

EID: 78649997630     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.09.009     Document Type: Article
Times cited : (14)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.