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Volumn 43, Issue 1, 2010, Pages 515-520
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Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diode
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Author keywords
[No Author keywords available]
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Indexed keywords
AL CONTACT;
BARRIER HEIGHTS;
COMPARISON STUDY;
ELECTRICAL CHARACTERISTIC;
ELECTRICAL PARAMETER;
IDEALITY FACTORS;
INTERFACIAL LAYER;
RECTIFYING PROPERTIES;
REVERSE-SATURATION CURRENTS;
RICHARDSON PLOT;
ROOM TEMPERATURE;
SCHOTTKY DIODES;
SERIES RESISTANCES;
TEMPERATURE RANGE;
DIODES;
DISTILLATION;
OHMIC CONTACTS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 78649997630
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2010.09.009 Document Type: Article |
Times cited : (14)
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References (22)
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