High-temperature epitaxy of PtSi/Si(0 0 1)

Journal of Crystal Growth

Volumn 173, Issue 3-4, 1997, Pages 393-401

  Kavanagh, K L ^a   Reuter, M C ^b   Tromp, R M ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; PLATINUM COMPOUNDS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH TEMPERATURE EPITAXY;

INTERFACES (MATERIALS);

EID: 0031120325     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01047-0     Document Type: Article

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