Investigation of PtSi/p-Si Schottky barrier height using I-V-T technique

Materials Chemistry and Physics

Volumn 51, Issue 1, 1997, Pages 88-91

  Wang, Wen Sheng ^a   Ho, Chia ^a   Chuang, Tien Min ^a  

^a CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Barrier height; I V T; Ptsi p Si Schottky diode; Texture

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; PLATINUM ALLOYS; TEXTURES; TRANSMISSION ELECTRON MICROSCOPY;

BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0040687746     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)80273-8     Document Type: Article

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