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Volumn 82, Issue 20, 2010, Pages

Atomistic models of hydrogenated amorphous silicon nitride from first principles

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Indexed keywords


EID: 78649749097     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.205201     Document Type: Article
Times cited : (25)

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    • 2 molecules are not incorporated into the films during the deposition, the actual concentration of hydrogen in our cells would change. The low- and high-density cell would contain 24 at.% and 14 at.% of hydrogen, respectively. Expected changes in density are small due to the small hydrogen mass.
    • 2 molecules are not incorporated into the films during the deposition, the actual concentration of hydrogen in our cells would change. The low- and high-density cell would contain 24 at. % and 14 at. % of hydrogen, respectively. Expected changes in density are small due to the small hydrogen mass.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.