Low-threshold-voltage TaN/LaTiO n-MOSFETs with small EOT

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 999-1001

  Lin, S H ^a   Cheng, C H ^b,c   Chen, W Barn ^b   Yeh, F Syeh ^a   Chin, Albert ^b,d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d Nano Electronics Consortium of Taiwan   (Taiwan)

Author keywords

LaTiO; Low Vt; Solid phase diffusion (SPD)

Indexed keywords

EQUIVALENT OXIDE THICKNESS; INTERFACIAL REACTIONS; LATIO; LOW THRESHOLD VOLTAGE; LOW THRESHOLDS; LOW VT; NMOSFETS; SELF-ALIGNED GATE; SOLID-PHASE DIFFUSION; SOLID-PHASE DIFFUSION (SPD);

DIFFUSION; SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 70049102515     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2027723     Document Type: Article

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