A novel graphene channel field effect transistor with Schottky tunneling source and drain

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 243-246

  Zhu, Jing ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

DESIGN PARAMETERS; DEVICE SIMULATION; SCHOTTKY TUNNELING SOURCE;

FIELD EFFECT TRANSISTORS;

EID: 39549119107     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430923     Document Type: Conference Paper

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