Poly-si nanowire nonvolatile memory with nanocrystal indiumGalliumZincOxide charge-trapping layer

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1407-1409

  Chen, Lun Chun ^a   Wu, Yung Chun ^b   Lin, Tien Chun ^b   Huang, Jyun Yang ^b   Hung, Min Feng ^b   Chen, Jiang Hung ^b   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Indium gallium zinc oxide (IGZO); nanocrystal (NC); nonvolatile memory (NVM); thin film transistor (TFT)

Indexed keywords

DEEP QUANTUM WELL; DEEP TRAPS; FOWLER-NORDHEIM TUNNELING; HIGH-DENSITY; INDIUM GALLIUM ZINC OXIDES; MEMORY WINDOW; NANOCRYSTAL (NC); NON-VOLATILE MEMORIES; POLY-SI; POLY-SI THIN-FILM TRANSISTORS; POLYCRYSTALLINE SILICON (POLY-SI); PROGRAM/ERASE;

CHARGE TRAPPING; GALLIUM; INDIUM; NANOCRYSTALS; NANOWIRES; POLYSILICON; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78649431869     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2076271     Document Type: Article

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