메뉴 건너뛰기




Volumn , Issue , 2009, Pages

A novel five-photo-mask low-temperature polycrystalline-silicon CMOS structure

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS; CMOS PROCESSS; CMOS STRUCTURES; CMOS TECHNOLOGY; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTACT BARRIER; FORMATION PROCESS; INDIUM TIN OXIDE; LOW TEMPERATURE POLYCRYSTALLINE SILICON; LOW TEMPERATURES; POLY-SI; POLYCRYSTALLINE; SILICON CMOS; TEST SAMPLES;

EID: 77952409096     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424393     Document Type: Conference Paper
Times cited : (1)

References (5)
  • 4
    • 0348209430 scopus 로고
    • Amorphous semiconductor image sensors: Physics, properties, and performance
    • J. Kanicki, Ed. Norwood, MA: Artech House
    • K. Rosan, "Amorphous semiconductor image sensors: Physics, properties, and performance," in Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic devices, J. Kanicki, Ed. Norwood, MA: Artech House, 1991, pp. 241-253.
    • (1991) Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices , pp. 241-253
    • Rosan, K.1
  • 5
    • 0033353362 scopus 로고    scopus 로고
    • Evaluation of n+ a-Si contact with indium tin oxide by X-ray photoelectron spectroscopy valence band measurement
    • Jun
    • H. Yabuhara and Y. Kataoka, "Evaluation of n+ a-Si contact with indium tin oxide by X-ray photoelectron spectroscopy valence band measurement," Jpn. J. Appl. Phys., vol. 38, no. 9A, pp. 5232-5235, Jun. 1999.
    • (1999) Jpn. J. Appl. Phys. , vol.38 , Issue.9 A , pp. 5232-5235
    • Yabuhara, H.1    Kataoka, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.