Physics-based model of IGBT including MOS side two-dimensional effects

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2006, Pages 1457-1464

  Lu, L ^a   Bryant, A ^b   Santi, E ^a   Hudgins, J L ^c   Palmer, P R ^d  

^a The Department of Mechanical Engineering

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

IGBT model; Physics based model; Power semiconductor modeling

Indexed keywords

CHARGE DISTRIBUTION; COMPUTER SIMULATION; FINITE ELEMENT METHOD; GATES (TRANSISTOR); MATHEMATICAL MODELS;

IGBT MODEL; PHYSICS-BASED MODEL; POWER SEMICONDUCTOR MODELING;

MOS DEVICES;

EID: 34948814036     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2006.256722     Document Type: Conference Paper

References (8)

1. P.R. Palmer, E. Santi, J.L. Hudgins, X. Kang, J.C. Joyce, P.Y. Eng, "Circuit Simulator Models for the Diode and IGBT with Full Temperature Dependent Features," IEEE Transactions on Power Electronics, Vol. 18, No. 5, pp. 1220-1229, Sept. 2003
2. X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, P.R. Palmer, "Characterization and Modeling of High-Voltage Field-Stop IGBTs," IEEE Transactions on Industry Applications, Vol. 39, No. 4, pp. 922-928, July 2003
3. L. Lu, S.G. Pytel, E. Santi, A. Bryant, J.L. Hudgins, P.R. Palmer, "Modeling of IGBT resistive and inductive turn on behavior," Proc. IEEE 40th Industry Applications Society Annual Meeting (IAS'05), pp. 2643-2650, Hong Kong, Oct. 2005
4. X. Kang, E. Santi, J.L. Hudgins, P.R. Palmer and J.F. Donlon "Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model," IEEE APEC 2003 AnnualMtg. Rec., Feb. 2003
5. L. Lu, S.G. Pytel, E. Santi, A. Bryant, J.L. Hudgins, P.R. Palmer, "Physical modeling of forward conduction in IGBTs and diodes," Proc. IEEE 40th Industry Applications Society Annual Meeting (IAS'05), pp. 2635-2642, Hong Kong, Oct. 2005
6. C. M. Johnson, "Comparison of silicon and silicon carbide semiconductors for a 10 kV switching application," 35th Annual IEEE Power Electronics Specialists Conference, pp.572-578, 2004
7. K. Sheng, S. J. Finney, B. W. Williams, "A new analytical IGBT model with improved electrical characteristics," IEEE Trans. Power Electronics, Vol. 14, No. 1, January 1999
8. A.R. Hemer Jr., "Modeling buffer layer IGBTs for circuit simulation," IEEE Transactions on Power Electronics, vol. 10, no. 2, pp. 111-123, 1995.