Physical modeling of forward conduction in IGBTs and diodes

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 4, Issue , 2005, Pages 2635-2642

  Lu, L ^a   Pytel, S G ^a   Santi, E ^a   Bryant, A T ^b   Hudgins, J L ^c   Palmer, P R ^d  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Forward conduction temperature dependence; Physics based model

Indexed keywords

ANALYTICAL STEADY-STATE PREDICTIONS; CONDUCTION LOSSES; FORWARD CONDUCTION TEMPERATURE DEPENDENCE; PHYSICS-BASED MODEL; SEMICONDUCTOR DEVICE LOSSES;

HEATING; PARAMETER ESTIMATION; POWER ELECTRONICS; SEMICONDUCTOR DEVICES; SWITCHING; TRANSISTORS; WAVEFORM ANALYSIS;

DIODES;

EID: 33745965816     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2005.1518832     Document Type: Conference Paper

References (8)

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8. th Annual IEEE Power Electronics Specialists Conference, pp.572-578, 2004