Modeling of MOS-side carrier injection in trench-gate IGBTs

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn , Issue , 2007, Pages 342-349

  Lu, L ^a   Chen, Z ^a   Bryant, A ^b   Santi, E ^a   Hudgins, J L ^c   Palmer, P R ^d  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR DIFFUSION EQUATION; CARRIER DISTRIBUTIONS; CARRIER INJECTION; DRIFT REGIONS; ONE-DIMENSIONAL SOLUTIONS; SWITCHING WAVEFORMS; TRENCH GATE IGBT; TRENCH GATES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 48949088985     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/07ias.2007.44     Document Type: Conference Paper

References (9)

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2. X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, P.R. Palmer, "Characterization and Modeling of High-Voltage Field-Stop IGBTs," IEEE Transactions on Industry Applications, Vol. 39, No. 4, pp. 922-928, July 2003
3. L. Lu, S.G. Pytel, E. Santi, A. Bryant, J.L. Hudgins, P.R. Palmer, "Modeling of IGBT resistive and inductive turn on behavior," Proc. IEEE 40th Industry Applications Society Annual Meeting (IAS'05), pp. 2643-2650, Hong Kong, Oct. 2005
4. X. Kang, E. Santi, J.L. Hudgins, P.R. Palmer and J.F. Donlon "Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model," IEEE APEC 2003 Annual Mtg. Rec., Feb. 2003
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6. T. Takahashi, et al., "Carrier stored trench-gate bipolar transistor (CSTBT) - a novel power device for high voltage application," Proceedings of ISPSD'96, 1996, pp. 349-352
7. T. Takeda, et al., "1200V trench gate NPT-IGBT (IEGT) with excellent low on-state voltage," Proceedings of ISPSD'98, 1998, pp.265-268
8. K. Sheng, F. Udrea and G.A.J. Amaratunga, "Optimum carrier distribution of the IGBT," Solid State Electronics, 2000
9. C. M. Johnson, "Comparison of silicon and silicon carbide semiconductors for a 10 kV switching application," 35th Annual IEEE Power Electronics Specialists Conference, pp.572-578, 2004