Lattice deformation of ZnO films with high nitrogen concentration

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7972-7975

  Park, S H ^a   Chang, J H ^c   Ko, H J ^d   Minegishi, T ^a   Park, J S ^a   Im, I H ^a   Ito, M ^a   Oh, D C ^e   Cho, M W ^a,b   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Korea Maritime University   (South Korea)

^d Korea Photonics Technology Institute (KOPTI)   (South Korea)

^e Hoseo University   (South Korea)

Author keywords

Lattice strain; Nitrogen incorporation; ZnO

Indexed keywords

DEFECT DENSITY; DOPING (ADDITIVES); II-VI SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTODEGRADATION; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; TENSILE STRAIN; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

DONOR-ACCEPTOR PAIR EMISSION; ELEVATING TEMPERATURES; EXCITATION POWER DEPENDENCE; HIGH-RESOLUTION X-RAY DIFFRACTION; LATTICE STRAIN; NITROGEN INCORPORATION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RESIDUAL TENSILE STRAIN;

NITROGEN PLASMA;

EID: 51449084406     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.047     Document Type: Article

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