Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique

Applied Physics Letters

Volumn 70, Issue 9, 1997, Pages 1143-1145

  Jung, H D ^a   Song, C D ^a,c   Wang, S Q ^a   Arai, K ^a   Wu, Y H ^a,d   Zhu, Z ^a   Yao, T ^a,e   Katayama Yoshida, H ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^e NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001609423     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118481     Document Type: Article

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