Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7332-7337

  Oh, D C ^a   Takai, T ^a   Hanada, T ^a   Cho, M W ^a,e   Yao, T ^a,e   Song, J S ^b   Chang, J H ^c   Lu, F ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b NeosemiTech Corporate ^*  (South Korea)

^c Korea Maritime University   (South Korea)

^d FUDAN UNIVERSITY   (China)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; CAPACITANCE; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

CAPACITANCE-TRANSIENT CURVE; ELECTRON TRAP CENTER; ENERGY SPECTRUM; GAUSSIAN DISTRIBUTIONS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 11044226939     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814170     Document Type: Article

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