Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Sinha, H ^a   Lauer, J L ^a   Nichols, M T ^a   Antonelli, G A ^b   Nishi, Y ^c   Shohet, J L ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b Novellus Systems   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CHARACTERISTIC; CAPACITANCE VOLTAGE CHARACTERISTIC; DEFECT STATE; FLAT-BAND VOLTAGE; HIGH FREQUENCY CAPACITANCE; INDUCED DAMAGE; NEGATIVE SHIFT; ORGANOSILICATES; POROUS LOW-K; POROUS ORGANOSILICATE; POSITIVE CHARGES; SILICON SUBSTRATES; TRAPPED ELECTRONS; ULTRAVIOLET IRRADIATIONS; UV IRRADIATION; VACUUM ULTRAVIOLETS; VUV PHOTON;

CAPACITANCE; DEFECTS; IRRADIATION; MOS CAPACITORS; POLYPEPTIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; VACUUM;

DIELECTRIC MATERIALS;

EID: 76449112589     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3306729     Document Type: Article

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