Novel cap annealing process for SiC crystal using ECR-sputtered carbon films and ECR plasma ashing

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 725-728

  Hirono, S ^a   Torii, H ^a   Tajima, T ^a   Amazawa, T ^a   Umemura, S ^b   Kamata, T ^b   Hirabayashi, Y ^c  

^a MES Afty   (Japan)

^b CHIBA INSTITUTE OF TECHNOLOGY   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Annealing; Cap film; Carbon film; ECR sputtering; Morphology; Sheet resistance

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; HARDNESS; MORPHOLOGY; SEMICONDUCTOR DOPING; SHEET RESISTANCE; SILICON CARBIDE;

ANNEALING PROCESS; ECR PLASMA; ECR SPUTTERING; HIGH DOSE; HIGH THERMAL; IMPURITY DOPING; ION IMPLANTED;

CARBON FILMS;

EID: 77955437110     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.725     Document Type: Conference Paper

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