메뉴 건너뛰기




Volumn 24, Issue 6, 2009, Pages

Advantages and disadvantages of sulfur passivation of InAs/GaSb superlattice waveguide photodiodes

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM SULFIDE; FORWARD BIAS; INAS/GASB SUPERLATTICES; MIDINFRARED; PHOTORESPONSIVITY; REVERSE LEAKAGE CURRENT; SULFUR PASSIVATION; ZERO-BIAS RESISTANCE;

EID: 78349297902     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/6/065008     Document Type: Article
Times cited : (26)

References (25)
  • 1
    • 0027687152 scopus 로고
    • Quantum-well infrared photodetectors
    • Levine B F 1993 Quantum-well infrared photodetectors J. Appl. Phys. 74 R1-R81
    • (1993) J. Appl. Phys. , vol.74
    • Levine, B.F.1
  • 2
    • 0005255658 scopus 로고
    • Semiconductor superlattices and quantum wells for infrared optoelectronics
    • Sizov F F and Rogalski A 1993 Semiconductor superlattices and quantum wells for infrared optoelectronics Prog. Quantum. Electron. 17 93-164
    • (1993) Prog. Quantum. Electron. , vol.17 , pp. 93-164
    • Sizov, F.F.1    Rogalski, A.2
  • 7
    • 2442689274 scopus 로고    scopus 로고
    • Waveguide-based broadband type-II heterostructure photodiode on InAs substrate
    • Giehl A R, Gumbel M, Schwender C, Herhammer N and Fouckhardt H 2004 Waveguide-based broadband type-II heterostructure photodiode on InAs substrate IEEE PTL-16 5 1358-60
    • (2004) IEEE PTL-16 , vol.5 , pp. 1358-1360
    • Giehl, A.R.1    Gumbel, M.2    Schwender, C.3    Herhammer, N.4    Fouckhardt, H.5
  • 8
    • 0039120255 scopus 로고
    • High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectors
    • Kurtz S R, Biefeld R M, Dawson L R, Fritz I J and Zipperian T E 1988 High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectors Appl. Phys. Lett. 53 1961-3
    • (1988) Appl. Phys. Lett. , vol.53 , pp. 1961-1963
    • Kurtz, S.R.1    Biefeld, R.M.2    Dawson, L.R.3    Fritz, I.J.4    Zipperian, T.E.5
  • 9
    • 78349270311 scopus 로고    scopus 로고
    • Material characterization for optimizing passivation of Type-II InAs/GaSb superlattice infrared photodetectors
    • New York: NNIN REU
    • Escudé N 2005 Material characterization for optimizing passivation of Type-II InAs/GaSb superlattice infrared photodetectors NNIN REU Research Accomplishments (New York: NNIN REU) p 32
    • (2005) NNIN REU Research Accomplishments , pp. 32
    • Escudé, N.1
  • 11
    • 0000122127 scopus 로고
    • First-principles study of sulfur passivation of GaAs (001) surfaces
    • Ohno T and Shiraishi K 1990 First-principles study of sulfur passivation of GaAs (001) surfaces Phys. Rev. B 42 11194-7
    • (1990) Phys. Rev. B. , vol.42 , pp. 11194-11197
    • Ohno, T.1    Shiraishi, K.2
  • 13
    • 21544471313 scopus 로고
    • Dramatic enhancement in the gain of a GaAs/AlGaAs heterojunction bipolar transistor by surface chemical passivation
    • Sandroff C J, Nottenburg R N, Bischoff J C and Bhat R 1987 Dramatic enhancement in the gain of a GaAs/AlGaAs heterojunction bipolar transistor by surface chemical passivation Appl. Phys. Lett. 51 33-5
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 33-35
    • Sandroff, C.J.1    Nottenburg, R.N.2    Bischoff, J.C.3    Bhat, R.4
  • 14
  • 16
    • 0037718541 scopus 로고    scopus 로고
    • Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors
    • Ravi M R, DasGupta A and DasGupta N 2003 Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors IEEE Trans. Electron Devices 50 532-34
    • (2003) IEEE Trans. Electron. Devices , vol.50 , pp. 532-534
    • Ravi, M.R.1    DasGupta, A.2    DasGupta, N.3
  • 18
    • 5244262223 scopus 로고
    • Sulfur passivation of GaAs surfaces
    • Ohno T 1991 Sulfur passivation of GaAs surfaces Phys. Rev. B 44 6306-11
    • (1991) Phys. Rev. B. , vol.44 , pp. 6306-6311
    • Ohno, T.1
  • 20
    • 79956006923 scopus 로고    scopus 로고
    • Sulphur passivation of the InGaAsSb photodiodes
    • Wu B H, Xia G Q, Li Z H and Zhou J 2002 Sulphur passivation of the InGaAsSb photodiodes Appl. Phys. Lett. 80 1303-5
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 1303-1305
    • Wu, B.H.1    Xia, G.Q.2    Li, Z.H.3    Zhou, J.4
  • 22
    • 33749371059 scopus 로고    scopus 로고
    • Surface passivation and capping of GaSb photodiode by chemical bath deposition of CdS
    • Chavan A, Chandola A, Sridaran S and Dutta P 2006 Surface passivation and capping of GaSb photodiode by chemical bath deposition of CdS J. Appl. Phys. 100 064512
    • (2006) J. Appl. Phys. , vol.100 , pp. 064512
    • Chavan, A.1    Chandola, A.2    Sridaran, S.3    Dutta, P.4
  • 24
    • 0000627051 scopus 로고    scopus 로고
    • Sulfidization of GaAs in alcoholic solutions: A method having an impact on efficiency and stability of passivation
    • Besselov V N, Konenkova E V and Lebedev M V 1997 Sulfidization of GaAs in alcoholic solutions: A method having an impact on efficiency and stability of passivation Mater. Sci. Eng. B 44 376
    • (1997) Mater. Sci. Eng. B. , vol.44 , pp. 376
    • Besselov, V.N.1    Konenkova, E.V.2    Lebedev, M.V.3
  • 25
    • 42549086845 scopus 로고    scopus 로고
    • Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide
    • Sheela D and DasGupta N 2008 Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide Semicond. Sci. Technol. 23 035018
    • (2008) Semicond. Sci. Technol. , vol.23 , pp. 035018
    • Sheela, D.1    DasGupta, N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.