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Volumn 16, Issue 5, 2004, Pages 1358-1360

Waveguide-based type-II heterostructure photodiode on InAs substrate with broad wavelength range photoresponse

Author keywords

Infrared detectors; Integrated optoelectronics; Photodiodes; Waveguides

Indexed keywords

HETEROJUNCTIONS; INFRARED DETECTORS; INFRARED RADIATION; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; TEMPERATURE;

EID: 2442689274     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.825985     Document Type: Article
Times cited : (7)

References (13)
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  • 7
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  • 8
    • 0026151686 scopus 로고
    • A novel beam propagation method for large refractive index steps and large propagation distances
    • May
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  • 9
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  • 10
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    • High-aspect-ratio, ultrathick, negative-tone near-UV photoresist and its applications for MEMS
    • H. Lorenz, M. Despont, N. Fahrni, J. Brugger, P. Vettiger, and P. Renaud, "High-aspect-ratio, ultrathick, negative-tone near-UV photoresist and its applications for MEMS," Sens. Actuators A, vol. 64, pp. 33-39, 1998.
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  • 12
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    • An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 205 K and 3.4 μm
    • J. H. Lee, J.-C. Chiang, S. S. Li, and P. J. Kannman, "An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 205 K and 3.4 μm," in Electrochem. Soc. Proc., vol. 98-21, 1999, pp. 188-193.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.