Effect of low substrate deposition temperature on the optical and electrical properties of Al2O3 doped ZnO films fabricated by ion beam sputter deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1139-1145

  Seong, J W ^a,b,c   Kim, K H ^a   Beag, Y W ^a   Koh, S K ^a   Yoon, K H ^b  

^a P & I Corporation   (South Korea)

^b Yonsei University   (South Korea)

^c Shinnae Techotown #405 ^*  (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FULL WIDTH AT HALF MAXIMUM (FWHM); INDIUM TIN OXIDES; POLYCRYSTALLINE FILMS; VACUUM SYSTEMS;

ALUMINUM COMPOUNDS; BINDING ENERGY; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; ION BEAM ASSISTED DEPOSITION; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; PYROLYSIS; STAINLESS STEEL; STRAIN; STRESSES; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

METALLIC FILMS;

EID: 4344702965     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1738654     Document Type: Article

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