-
2
-
-
34247221087
-
A digital isolation amplifier in silicon-on-sapphire CMOS
-
10.1049/el:20070509
-
E. Culurciello P. Pouliquen A. Andreou 2007 A digital isolation amplifier in silicon-on-sapphire CMOS Electronics Letters 43 8 451 452 10.1049/el:20070509
-
(2007)
Electronics Letters
, vol.43
, Issue.8
, pp. 451-452
-
-
Culurciello, E.1
Pouliquen, P.2
Andreou, A.3
-
4
-
-
48349091800
-
A UV photodetector with internal gain fabricated in silicon on sapphire CMOS
-
November
-
Marwick, M., & Andreou, A. (2007). A UV photodetector with internal gain fabricated in silicon on sapphire CMOS. In IEEE sensors 2007 conference, November 2007.
-
(2007)
IEEE Sensors 2007 Conference 2007
-
-
Marwick, M.1
Andreou, A.2
-
5
-
-
33847367619
-
Three-dimensional photodetectors in 3D silicon-on-insulator technology
-
10.1109/LED.2006.889042
-
P. Weerakoon E. Culurciello 2007 Three-dimensional photodetectors in 3D silicon-on-insulator technology IEEE Electron Device Letters 28 2 117 119 10.1109/LED.2006.889042
-
(2007)
IEEE Electron Device Letters
, vol.28
, Issue.2
, pp. 117-119
-
-
Weerakoon, P.1
Culurciello, E.2
-
6
-
-
33645222732
-
A nano-Watt silicon-on-sapphire ADC using 2C-1C capacitor chain
-
Fu, Z., Weerakoon, P., & Culurciello, E. (2006). A nano-Watt silicon-on-sapphire ADC using 2C-1C capacitor chain. IEE Electronics Letters, 42(6), 526-528.
-
(2006)
IEE Electronics Letters
, vol.42
, Issue.6
, pp. 526-528
-
-
Fu, Z.1
Weerakoon, P.2
Culurciello, E.3
-
9
-
-
34047102356
-
An 8-bit, 1 mW successive approximation ADC in SOI CMOS
-
Culurciello, E., & Andreou, A. (2006). An 8-bit, 1 mW successive approximation ADC in SOI CMOS. IEEE TCAS-II Letters, 53(9), 858-862.
-
(2006)
IEEE TCAS-II Letters
, vol.53
, Issue.9
, pp. 858-862
-
-
Culurciello, E.1
Andreou, A.2
-
10
-
-
51749111616
-
Back-illuminated ultraviolet image sensor in silicon-on-sapphire
-
May Seattle, WA: IEEE
-
Park, J., & Culurciello, E. (2008, May). Back-illuminated ultraviolet image sensor in silicon-on-sapphire. In IEEE international symposium on circuits and systems, ISCAS '07 (pp. 1854-1857). Seattle, WA: IEEE.
-
(2008)
IEEE International Symposium on Circuits and Systems, ISCAS '07
, pp. 1854-1857
-
-
Park, J.1
Culurciello, E.2
-
12
-
-
0030082853
-
Robust design of rail-to-rail CMOS operational amplifiers for a low power supply voltage
-
Sakurai, S., & Ismail, M. (1996). Robust design of rail-to-rail CMOS operational amplifiers for a low power supply voltage. IEEE Journal of Solid-State Circuits, 31(2), 146-156.
-
(1996)
IEEE Journal of Solid-State Circuits
, vol.31
, Issue.2
, pp. 146-156
-
-
Sakurai, S.1
Ismail, M.2
-
13
-
-
0032187835
-
Compact low-voltage power-efficient operational amplifier cells for VLSI
-
De Langen, K.-J., & Huijsing, J. (1998). Compact low-voltage power-efficient operational amplifier cells for VLSI. Solid-State Circuits IEEE Journal, 33(10), 1482-1496.
-
(1998)
Solid-State Circuits IEEE Journal
, vol.33
, Issue.10
, pp. 1482-1496
-
-
De Langen, K.-J.1
Huijsing, J.2
-
15
-
-
34548826525
-
A self-biased operational transconductance amplifier in 0.18 micron 3d soi-cmos
-
May
-
Christen, J., & Andreou, A. (2007, May) A self-biased operational transconductance amplifier in 0.18 micron 3d soi-cmos. In IEEE international symposium, pp. 137-140.
-
(2007)
IEEE International Symposium
, pp. 137-140
-
-
Christen, J.1
Andreou, A.2
-
16
-
-
0000903370
-
Potential and modeling of 1-μm soi cmos operational transconductance amplifiers for applications up to 1 GHz
-
Eggermont, J. P., Flandre, D., Raskin, J.-P., & Colinge, J.-P. (1998). Potential and modeling of 1-μm soi cmos operational transconductance amplifiers for applications up to 1 GHz. Solid-State Circuits IEEE Journal, 33(4), 640-643.
-
(1998)
Solid-State Circuits IEEE Journal
, vol.33
, Issue.4
, pp. 640-643
-
-
Eggermont, J.P.1
Flandre, D.2
Raskin, J.-P.3
Colinge, J.-P.4
-
17
-
-
0041441251
-
"Linear kink effect" induced by electron valence band tunnelling in ultrathin gate oxide bulk and Soi MOSFETS
-
Mercha, A., Rafi, J., Simoen, E., Augendre, E., & Claeys, C. (2003). "Linear kink effect" induced by electron valence band tunnelling in ultrathin gate oxide bulk and Soi MOSFETS. IEEE Transactions on Electronic Devices, 50(7), 1675-1682.
-
(2003)
IEEE Transactions on Electronic Devices
, vol.50
, Issue.7
, pp. 1675-1682
-
-
Mercha, A.1
Rafi, J.2
Simoen, E.3
Augendre, E.4
Claeys, C.5
-
18
-
-
0036294595
-
Modeling hot-electrons effects in silicon-on-sapphire mosfets
-
Culurciello, E., Andreou, A., & Pouliquen, P. (2002). Modeling hot-electrons effects in silicon-on-sapphire mosfets. In: IEEE international symposium on circuits and systems, Vol. 1, pp. 569-572.
-
(2002)
IEEE International Symposium on Circuits and Systems
, vol.1
, pp. 569-572
-
-
Culurciello, E.1
Andreou, A.2
Pouliquen, P.3
-
19
-
-
0022284061
-
-
Reggiani, L. (Ed.) Berlin: Springer-Verlag Press
-
Reggiani, L. (Ed.). (1985). Hot electron transport in semiconductors. Berlin: Springer-Verlag Press.
-
(1985)
Hot Electron Transport in Semiconductors
-
-
-
22
-
-
0028742371
-
A compact power-efficient 3V CMOS rail-to-rail input/output operational amplifier for VLSI cell libraries
-
10.1109/4.340424
-
R. Hogervost J. Tero R. Eschauzier J. Huijsing 1994 A compact power-efficient 3V CMOS rail-to-rail input/output operational amplifier for VLSI cell libraries IEEE Journal of Solid-State Circuits 29 12 1505 1513 10.1109/4.340424
-
(1994)
IEEE Journal of Solid-State Circuits
, vol.29
, Issue.12
, pp. 1505-1513
-
-
Hogervost, R.1
Tero, J.2
Eschauzier, R.3
Huijsing, J.4
-
23
-
-
78149284376
-
-
Sakmann, B., Neher, E. (Eds.), Single-channel recording (Chap. 1). New York: Plenum Press
-
Sigworth, F. (1983). Electronic design of the patch-clamp. In: Sakmann, B., Neher, E. (Eds.), Single-channel recording (Chap. 1). New York: Plenum Press.
-
(1983)
Electronic Design of the Patch-clamp
-
-
Sigworth, F.1
-
24
-
-
30844443847
-
Process and temperature performance of a CMOS beta-multiplier voltage reference
-
August
-
Liu, S., Baker, R. (1998, August). Process and temperature performance of a CMOS beta-multiplier voltage reference. In Proceedings of IEEE MWSCAS 1998, pp. 33-36.
-
(1998)
Proceedings of IEEE MWSCAS 1998
, pp. 33-36
-
-
Liu, S.1
Baker, R.2
-
25
-
-
0041424951
-
Flicker noise behavior of MOSFETS fabricated in 0.5 μm fully depleted (FD) silicon-on-sapphire (SOS) in weak, moderate and strong inversion
-
Ericson, M., Britton, C., Rochelle, J., Blalock, B., Binkley, D. Wintenberg, A., & Williamson, B. (2003). Flicker noise behavior of MOSFETS fabricated in 0.5 μm fully depleted (FD) silicon-on-sapphire (SOS) in weak, moderate and strong inversion. IEEE Transactions on Nuclear Science, 50(4), 963-109.
-
(2003)
IEEE Transactions on Nuclear Science
, vol.50
, Issue.4
, pp. 963-109
-
-
Ericson, M.1
Britton, C.2
Rochelle, J.3
Blalock, B.4
Binkley Wintenberg D, A.5
Williamson, B.6
-
26
-
-
33751547785
-
-
March (52nd ed.). San Diego, CA: Peregrine Semiconductor Inc.
-
Peregrine. (2008, March). 0.5 um FC design manual (52nd ed.). San Diego, CA: Peregrine Semiconductor Inc.
-
(2008)
0.5 Um FC Design Manual
-
-
Peregrine1
|