A UV photodetector with internal gain fabricated in silicon on sapphire CMOS

Proceedings of IEEE Sensors

Volumn , Issue , 2007, Pages 535-538

  Marwick, Miriam Adlerstein ^a   Andreou, Andreas G ^a  

^a Johns Hopkins University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CORUNDUM; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SAPPHIRE; STRUCTURAL OPTIMIZATION; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

BACKSIDE ILLUMINATIONS; CHANNEL DOPING; DEVICE STRUCTURES; INTERNAL AMPLIFICATIONS; MOS TRANSISTORS; RESPONSIVITY; SAPPHIRE SUBSTRATES; SILICON ON SAPPHIRES; SUB THRESHOLDS; TCAD SIMULATIONS; UV PHOTODETECTORS; VOLTAGE BIASES;

SENSORS;

EID: 48349091800     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2007.4388454     Document Type: Conference Paper

References (10)

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