Modeling hot-electrons effects in silicon-on-sapphire MOSFETs

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 1, Issue , 2002, Pages

  Culurciello, Eugenio ^a   Andreou, Andreas ^a   Pouliquen, Philippe ^a  

^a Johns Hopkins University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRONS; HOT CARRIERS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SILICON ON SAPPHIRE TECHNOLOGY;

CRITICAL VOLTAGE; DRAIN CURRENT MODEL; HOT CARRIER EFFECTS; HOT ELECTRONS EFFECTS;

SEMICONDUCTOR DEVICE TESTING;

EID: 0036294595     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Modeling and simulation of silicon-on-sapphire MOSFETs for analogue circuit design
2. An analytical drain current model considering both electron and lattice temperatures simultaneously for deep submicron ultrathin SOI NMOS devices with self-heating