Flicker noise behavior of MOSFETs fabricated in 0.5 μm fully depleted (FD) silicon-on-sapphire (SOS) CMOS in weak, moderate, and strong inversion

IEEE Transactions on Nuclear Science

Volumn 50, Issue 4 II, 2003, Pages 963-968

  Ericson, M N ^a   Britton Jr , C L ^a   Rochelle, J M ^b   Blalock, B J ^c   Binkley, D M ^d   Wintenberg, A L ^a   Williamson, B D ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b Concorde Microsystems Inc ^*  (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

^d UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

Author keywords

CMOSFETs; Flicker noise; Inversion coefficient; Noise measurement; Silicon on insulator technology

Indexed keywords

CMOS INTEGRATED CIRCUITS; RADIATION DETECTORS; SIGNAL NOISE MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY;

FLICKER NOISE;

MOSFET DEVICES;

EID: 0041424951     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.815146     Document Type: Conference Paper

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