SCOPUS 정보 검색 플랫폼

Journal of Alloys and Compounds

Volumn 509, Issue 2, 2011, Pages 271-275

Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium

(7) Hao, Xihong a,b Zhai, Jiwei a Zhou, Jing c Yue, Zhenxing d Yang, Jichun b Zhao, Wenguang b An, Shengli b

a TONGJI UNIVERSITY (China)

b INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c WUHAN UNIVERSITY OF TECHNOLOGY (China)

d TSINGHUA UNIVERSITY (China)

Author keywords

Microstructure; Phase transition; Sol gel processes; Thin film

Indexed keywords

ANTIFERROELECTRIC FILMS; ANTIFERROELECTRIC THIN FILMS; ANTIFERROELECTRICS; DIELECTRIC MEASUREMENTS; ELECTRICAL PROPERTY; FATIGUE PROPERTIES; LEAD ZIRCONATE; SCANNING ELECTRON MICROSCOPE; SILICON SUBSTRATES; SOL-GEL METHODS; SURFACE MICROSTRUCTURES;

ANTIFERROELECTRICITY; BARIUM; DIFFRACTION; DOPING (ADDITIVES); GELS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; PLATINUM; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; SOLS; STRONTIUM; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

ELECTRIC PROPERTIES;

EID: 78149279930 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.07.200 Document Type: Article

Times cited : (43)

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