Low-temperature growth of (1 1 0)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3 antiferroelectric thin films on LaNiO3/Si substrate

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1137-1141

  Hao, Xihong ^a,b   Zhai, Jiwei ^a  

^a TONGJI UNIVERSITY   (China)

^b INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

A3. Low temperature growth; B1. Perovskites; B2. Dielectric materials

Indexed keywords

ANTIFERROELECTRICITY; BUFFER LAYERS; DIELECTRIC MATERIALS; PEROVSKITE; SOL-GEL PROCESS; X RAY DIFFRACTION ANALYSIS;

ANTIFERROELECTRIC THIN FILMS; LOW-TEMPERATURE GROWTH;

THIN FILMS;

EID: 39649119067     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.050     Document Type: Article

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