Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3990-3994

  Zhai, Jiwei ^a   Yao, Y ^a   Li, X ^a   Hung, T F ^a   Xu, Z K ^a   Chen, Haydn ^a   Colla, Eugene V ^b   Wu, T B ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b University of Illinois at Urbana Champaign   (United States)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI FERROELECTRICS; ANTIFERROELECTRIC THIN FILMS; CONDUCTIVE BUFFER LAYER; FERROELECTRIC PHASE; FIELD-INDUCED; HIGH QUALITY; PEROVSKITE STRUCTURES; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; SELECTED AREA ELECTRON DIFFRACTION PATTERN; SUPERLATTICE SPOT;

ELECTRON DIFFRACTION; PEROVSKITE; SILICON; SOL-GEL PROCESS; SUBSTRATES; THIN FILMS;

ANTIFERROELECTRICITY;

EID: 18644384292     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1505981     Document Type: Article

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