Improved dielectric properties of (1 1 0)-preferred (Pb, La) (Zr, Sn, Ti)O3 antiferroelectric thin films on metalorganic decomposition-derived LaNiO3 buffer layer

Journal of Crystal Growth

Volumn 311, Issue 1, 2008, Pages 90-94

  Hao, Xihong ^a,b   Zhai, Jiwei ^a   Yao, Xi ^a  

^a TONGJI UNIVERSITY   (China)

^b INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

A1. Crystal structure; B1. Buffer layer; B2. Dielectric materials

Indexed keywords

ANTIFERROELECTRICITY; BUFFER LAYERS; CERAMIC CAPACITORS; COLLOIDS; CRYSTAL STRUCTURE; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; GELATION; LANTHANUM; LEAD; LEAD ALLOYS; OPTICAL WAVEGUIDES; OXIDE MINERALS; PEROVSKITE; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOL-GEL PROCESS; SOLIDS; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS; TIN; ZIRCONIUM;

A1. CRYSTAL STRUCTURE; ANTIFERROELECTRIC THIN FILMS; B1. BUFFER LAYER; B2. DIELECTRIC MATERIALS; DIELECTRIC MEASUREMENTS; ELECTRICAL PROPERTIES; LNO BUFFER LAYERS; METALORGANIC DECOMPOSITIONS; PEROVSKITE THIN FILMS; PREFERRED ORIENTATIONS; SEM PICTURES; SI SUBSTRATES; SOL-GEL METHODS; XRD PATTERNS;

DIELECTRIC MATERIALS;

EID: 57649198915     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.010     Document Type: Article

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