Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3621-3623

  Jiwei, Zhai ^a   Cheung, M H ^a   Xu, Zheng Kui ^a   Li, Xin ^a   Chen, Haydn ^a   Colla, Eugene V ^b   Wu, T B ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b University of Illinois at Urbana Champaign   (United States)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROELECTRICS; BULK SAMPLES; DIELECTRIC AND FERROELECTRIC PROPERTIES; FERROELECTRIC STATE; PHASE SWITCHING; PREFERRED ORIENTATIONS; SATURATION POLARIZATION; SILICON SUBSTRATES;

ANTIFERROELECTRICITY; ELECTRIC PROPERTIES; FERROELECTRICITY; GELS; LEAD; POLARIZATION; SOL-GELS; SOLS; THIN FILMS; TIN; ZIRCONIUM;

SOL-GEL PROCESS;

EID: 79956000169     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519944     Document Type: Article

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