Study of La-modified antiferroelectric PbZrO3 thin films

Thin Solid Films

Volumn 423, Issue 1, 2003, Pages 88-96

  Bharadwaja, Srowhti S N ^a,b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b Ceramics Laboratory Ecole Polytechnique Federale de Lausanne   (Switzerland)

Author keywords

Dielectric properties; Electrical properties and measurements; Lead zirconate

Indexed keywords

ANTIFERROELECTRIC MATERIALS; DEFECTS; DIELECTRIC PROPERTIES; LANTHANUM; LASER ABLATION; LEAD COMPOUNDS; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING;

CURIE TEMPERATURE;

THIN FILMS;

EID: 0037221735     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00996-3     Document Type: Article

References (32)

1. Scott J.F., Paz de Araujo C.A. Science. 246:1989;1400.
2. Dimos D., Mueller C.H. Annu. Rev. Mater. Sci. 28:1998;397.
3. Polla D.L. Microelectron. Eng. 29:1995;51.
4. Nemirovsky Y., Nemirovsky A., Muralt P., Setter N. Sensors Actuators A. 56:1996;239.
5. Haertling G. J. Am. Ceram. Soc. 82:1999;797.
6. S.B. Krupanidhi, Ferroelectric thin films: preparation and characterization, in: M.H. Francombe (Ed.), Ferroelectric Film Devices, Handbook of Thin Film Devices, vol. 5, Academic Press, 2001.
7. Kighelman Z., Damjanovic D., Seifert A., Sagalowicz L., Setter N. Appl. Phys. Lett. 73:1998;2281.
8. Li J.-F., Viehland D.D., Tani T., Lakeman C.D.E., Payne D.A. J. Appl. Phys. 75:1994;442.
9. Pai N.G., Xu B., Cross L.E. Integrated Ferroelectr. 22:1998;501.
10. Jaffe B. Proc. Inst. Radio Eng. 49:1961;1264.
11. Uchino K., Nomura S. Ferroelectrics. 50:1983;191.
12. Wang F., Li K.K., Furman E., Haertling G.H. Opt. Lett. 18:1993;1615.
13. Shirane G., Swaguchi E., Takagi Y. Phys. Rev. 84:1951;476.
14. Sengupta S.S., Roberts D., Li J.-F., Kim M.C., Payne D.A. J. Appl. Phys. 78:1995;1171.
15. Xu B., Ye Y., Cross L.E. J. Appl. Phys. 87:2000;2507.
16. Dai X., Li J.-F., Viehland D. Phys. Rev. B. 51:1995;2651.
17. Dai X., Xu Z., Viehland D. J. Appl. Phys. 79:1996;1021.
18. Sawaguchi E., Shirane G., Takagi Y. J. Phys. Soc. Jpn. 6:1951;333.
19. Lines M.E., Glass A.M. Principles and Application of Ferroelectric and Related Materials. 1979;Clarendon Press, Oxford.
20. Plessner K.W. Proc. Phys. Soc. (Lond.). 69:(444B):1956;1261.
21. Lambeck P.V., Jonker G.H. Ferroelectrics. 22:1978;729.
22. Hu H., Krupanidhi S.B. J. Mater. Res. 9:1994;1484.
23. Lampert M.A., Mark P. Current Injection in Solids. 1970;Academic Press, New York.
24. Ujma Z., et al. Ferroelectrics. 17:1977;60.
25. Sudhama C., Kim J., Lee J., Chikarmane V., Shepherd W., Myers E.R. J. Vac. Sci. Technol. B. 11:1993;1302.
26. Robertson J., Chen C.W. Appl. Phys. Lett. 74:1999;1168.
27. Griswold E.M., Sayer M., Amm D.T., Calder I.D. Can. J. Phys. 69:1991;260.
28. Dimos D., Schwartz R.W., Lockwod S.J. J. Am. Ceram. Soc. 76:1994;5394.
29. Ujma Z., et al. Ferroelectrics. 120:1991;211.
30. Bharadwaja S.S.N., Krupanidhi S.B. J. Appl. Phys. 86:1999;5862.
31. Lampert M.A. Phys. Rev. 103:1956;1648.
32. Bube R.H. J. Appl. Phys. 33:1962;1733.