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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6654-6660

Effects of Ce, Cr and Er doping and annealing conditions on the microstructural features and electrical properties of PbZrO3 thin films prepared by sol-gel process

(3) Mensur Alkoy, Ebru a,b Alkoy, Sedat a,c Shiosaki, Tadashi a

a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b KOCAELI UNIVERSITY (Turkey)

c Institute of Technology (Turkey)

Author keywords

Antiferroelectrics; Doping; PbZrO3; Sol gel; Thin films

Indexed keywords

ANNEALING; ANTIFERROELECTRIC MATERIALS; CHROMIUM; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ERBIUM; LEAD COMPOUNDS; MICROSTRUCTURE; PEROVSKITE; SOL-GELS; THIN FILMS;

PBZRO3; RANDOM ORIENTATION;

CERIUM;

EID: 31544483630 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.6654 Document Type: Article

Times cited : (24)

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