Preparation and dielectric properties of compositionally graded lead barium zirconate thin films

Journal of Alloys and Compounds

Volumn 501, Issue 2, 2010, Pages 358-361

  Hao, Xihong ^a,b   Zhang, Zhiqing ^b   Zhou, Jing ^c   An, Shengli ^b   Zhai, Jiwei ^a  

^a TONGJI UNIVERSITY   (China)

^b INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

(Pb1 xBax)ZrO3; Dielectric properties; Graded thin films; Structure

Indexed keywords

(PB1-XBAX)ZRO3; ELECTRICAL MEASUREMENT; FIGURE OF MERIT; GRADED FILMS; LEAD BARIUM ZIRCONATE; PT(111); PURE PEROVSKITE PHASE; SILICON SUBSTRATES; SOL-GEL METHODS; TEMPERATURE COEFFICIENT OF CAPACITANCE; TEMPERATURE STABILITY; TUNABILITIES;

BARIUM; BARIUM ZIRCONATE; DIELECTRIC LOSSES; HOLOGRAPHIC INTERFEROMETRY; LEAD; OXIDE MINERALS; PEROVSKITE; PLATINUM; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZIRCONIUM ALLOYS;

FILM PREPARATION;

EID: 77954242856     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.04.104     Document Type: Article

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