Dielectric properties of oriented thin films of PbZrO3 on Si produced by pulsed laser ablation

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7808-7812

  Chattopadhyay, Soma ^a   Ayyub, Pushan ^a   Palkar, V R ^a   Multani, M S ^a   Pai, S P ^a   Purandare, S C ^a   Pinto, R ^a  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; LASER ABLATION; LEAD COMPOUNDS; MORPHOLOGY; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; THERMAL EFFECTS; THERMAL VARIABLES MEASUREMENT;

ANTIFERROELECTRIC PEROVSKITE; DIELECTRIC HYSTERESIS; GROWTH CONDITION;

THIN FILMS;

EID: 0032097067     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367955     Document Type: Article

References (19)

1. M. H. Francombe, in Physics of Thin Films: Mechanic and Dielectric Properties, edited by M. H. Francombe and J. L. Vossen (Academic, San Diego, 1993), pp. 225-300.
2. D. Dimos, in Annual Review of Materials Science, edited by B. W. Wessels, E. N. Kaufmann, J. A. Giordmaine, and J. B. Wachtman (Annual Reviews Inc., Palo Alto, 1995), pp. 273-293.
3. V. R. Palkar, S. C. Purandare, S. P. Pai, S. Chattopadhyay, P. R. Apte, R. Pinto, and M. S. Multani, Appl. Phys. Lett. 68, 1582 (1996).
4. Y. M. Kang, J. K. Ku, and S. Baik, J. Appl. Phys. 78, 2601 (1995).
5. A. R. Raju and C. N. R. Rao, Appl. Phys. Lett. 66, 896 (1995).
6. H. Tanaka, H. Tabata, T. Kawai, and S. Kawai, Jpn. J. Appl. Phys., Part 1 33, 451 (1994).
7. R. Bruchhaus, H. Huber, D. Pitzer, and W. Wersing, Integr. Ferroelectr. 4, 365 (1994).
8. M. D. Carper and P. P. Phule, Appl. Phys. Lett. 63, 153 (1993).
9. Y. Yoneda, H. Kasatani, H. Terauchi, Y. Yano, T. Terashima, and Y. Bando, J. Phys. Soc. Jpn. 62, 1840 (1993).
10. K. Yamakawa, S. Trolier-McKinstry, J. P. Dougherty, and S. B. Krupanidhi, Appl. Phys. Lett. 67, 2014 (1995).
11. I. Kanno, S. Hayashi, M. Kitagawa, R. Takayama, and T. Hirao, Appl. Phys. Lett. 66, 145 (1995).
12. K. K. Li, F. Wang, and G. H. Haertling, J. Mater. Res. 30, 1386 (1995).
13. G. R. Bai, H. L. M. Chang, D. J. Lam, and Y. Gao, Appl. Phys. Lett. 62, 1754 (1993).
14. M. E. Lines and A. M. Glass, in Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977), p. 262.
15. B. A. Scott and G. Burns, J. Am. Ceram. Soc. 55, 331 (1972).
16. V. R. Palkar, S. Chattopadhyay, P. Ayyub, M. S. Multani, S. K. Paranjape, and V. Siruguri, Mater. Lett. 32, 171 (1997).
17. R. D. Vispute, S. M. Kanetkar, S. B. Ogale, K. C. Rajkumur, A. Madhukar, N. Parikh, and B. Patnaik, Physica C 199, 59 (1992).
18. P. Ayyub, V. R. Palkar, S. Chattopadhyay, and M. S. Multani, Phys. Rev. B 51, 6135 (1995).
19. S. Chattopadhyay, P. Ayyub, V. R. Palkar, and M. S. Multani, Phys. Rev. B 52, 13177 (1995).