Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

Semiconductor Science and Technology

Volumn 25, Issue 8, 2010, Pages

  Plis, E ^a   Rodriguez, J B ^b   Balakrishnan, G ^a   Sharma, Y D ^a   Kim, H S ^a   Rotter, T ^a   Krishna, S ^a  

^a MSC01 1070   (United States)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; APPLIED BIAS; CUT-OFF; GAAS SUBSTRATES; INAS/GASB; INAS/GASB SLS; INTERFACIAL MISFIT DISLOCATIONS; MIDINFRARED; SPECIFIC DETECTIVITY; STRAINED LAYER SUPERLATTICE; THREADING DISLOCATION; ZERO-BIAS;

GALLIUM ARSENIDE; INDIUM ANTIMONIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SUPERLATTICES;

GALLIUM ALLOYS;

EID: 78149273521     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/8/085010     Document Type: Article

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