GaAs based InAs/GaSb superlattice short wavelength infrared detectors grown by molecular beam epitaxy

Chinese Physics Letters

Volumn 26, Issue 2, 2009, Pages

  Tang, Bao ^a   Xu, Ying Qiang ^a   Zhou, Zhi Qiang ^a   Hao, Rui Ting ^a   Wang, Guo Wei ^a   Ren, Zheng Wei ^a   Niu, Zhi Chuan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANTIMONY COMPOUNDS; ANTIREFLECTION COATINGS; GALLIUM ARSENIDE; INDIUM ANTIMONIDES; INDIUM ARSENIDE; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

ACTIVE LAYER; CUTOFF WAVELENGTHS; INAS/GASB SUPERLATTICES; INTERFACIAL MISFIT; MOLECULAR-BEAM EPITAXY; PHOTOCONDUCTION; PIXEL AREAS; QUANTUM DOT LAYERS; SEMI-INSULATING SUBSTRATE; SHORT-WAVELENGTH INFRARED;

III-V SEMICONDUCTORS;

EID: 66149112005     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/2/028102     Document Type: Article

References (19)

1. Johnson J L, Samoska L A, Gossard A C, Merz J, Jack M D, Chapman G R, Baumgratz B A, Kosai K and Johnson S M 1996 J. Appl. Phys. 80 1116
2. Fuchs F, Weimar U, Pletschen W, Schmitz J, Ahlswede E, Walther M, Wagner J and Koidl P 1997 Appl. Phys. Lett. 71 3251
3. Rehm R, Walther M, Schmitz J, Fleiner J, Fuchs F, Ziegler J and Cabanski W 2005 SPIE 5957 595701
4. Zhang X B, Ryou J H, Dupuis R D, Petschke A, Mou S, Chuang S L, Xu C and Hsieh K C 2006 Appl. Phys. Lett. 88 072104
5. Rodriguez J B, Christol P, Ouvrard A, Chevrier F, Grech P and Joullie A 2005 Electron. Lett. 41 362
6. Mohseni H, Tahraoui A, Wojkowski J, Razeghi M, Brown G J, Mitchel W C and Park Y S 2000 Appl. Phys. Lett. 77 1572
7. Mohseni H, Wojkowski J, Razeghi M, Brown G and Mitchel W 1999 IEEE J. Quantum Electron. 35 1041
8. Blank H, Thomas M, Wong K and Kroemer H 1996 Appl. Phys. Lett. 69 2080
9. Hao R T, Xu Y Q, Zhou Z Q, Ren Z W, Ni H Q, He Z H and Niu Z C 2007 J. Phys. D: Appl. Phys. 40 1080
10. Bracker A S, Yang M J, Bennett B R, Culbertson J C and Moore W J 2000 J. Cryst. Growth 220 384
11. Hao R T, Xu Y Q, Zhou Z Q, Ren Z W, Ni H Q, He Z H and Niu Z C 2007 J. Phys. D: Appl. Phys. 40 6690
12. Balakrishnan G, Tatebaysshi J, Khoshakhlagh A, Huang S H, Jallipalli A, Daswon L R and Huffaker D L 2006 Appl. Phys. Lett. 89 161104
13. Steinshnider J, Harper J, Weimer M, Lin C H, Pei S S and Chow D H 2000 Phys. Rev. Lett. 85 4562
14. Steinshnider J, Weimer M, Kaspi R and Turner G W 2000 Phys. Rev. Lett. 85 2953
15. Renard C, Marcadet X, Massies J, Prévot I, Bisaro R and Galtier P 2003 J. Cryst. Growth 259 69
16. Dente G C and Tilton M L 1999 J. Appl. Phys. 86 1420
17. Hall K C, Gundogdu K, Altunkaya E, Lau W H, Flatte M E, Boggess T, Zinck J J, arvos-Carter W B and Skeith L 2003 Phys. Rev. B 68 115311
18. Szmulowicz F, Haugan H and Brown G J 2004 Phys. Rev. B 69 155321
19. Zhen H L, Li N, Xiong D Y, Zhou X C, Lu W and Liu H C 2005 Chin. Phys. Lett. 22 1806