NBn detectors based on InAsGaSb type-II strain layer superlattice

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1145-1148

  Bishop, G ^a   Plis, E ^a   Rodriguez, J B ^a   Sharma, Y D ^a   Kim, H S ^a   Dawson, L R ^a   Krishna, S ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF WAVELENGTH; DARK CURRENT; PHOTODIODE PROCESSING; SUPERLATTICE PHOTODETECTORS;

INDIUM COMPOUNDS; PHOTODIODES; QUANTUM EFFICIENCY; SUPERLATTICES; WAVELENGTH;

PHOTODETECTORS;

EID: 44649180982     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2830627     Document Type: Article

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