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Volumn 95, Issue 18, 2009, Pages

Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

(4) Nguyen, B M a Bogdanov, S a Pour, S Abdollahi a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BARRIER LAYERS; DETECTIVITY; ELECTRICAL TRANSPORT; HYBRID PHOTO DETECTORS; LOW CURRENT DENSITY; MINORITY CARRIER; P TYPE SEMICONDUCTOR; PHOTORESPONSIVITY; PHOTOVOLTAIC DEVICES; TYPE II; VERY LONG WAVELENGTH INFRARED;

OPTOELECTRONIC DEVICES; SUPERLATTICES;

PHOTODETECTORS;

EID: 70449336488 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3258489 Document Type: Article

Times cited : (107)

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