Charge transport in nanocrystal wires created by direct electron beam writing

Micro and Nano Letters

Volumn 5, Issue 5, 2010, Pages 274-277

  Jacke, S ^a   Plaza, J L ^a   Wilcoxon, J P ^a   Palmer, R E ^a   Beecher, P ^b   De Marzi, G ^b   Redmond, G ^b,c   Quinn, A J ^b   Chen, Y ^a,d  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c UNIVERSITY COLLEGE DUBLIN   (Ireland)

^d UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONACEOUS MATRIX; CHARGE TRANSPORT; DIRECT ELECTRON BEAM WRITING; ELECTRICAL CHARACTERISATION; ELECTRON BEAM WRITING; GOLD NANOCRYSTALS; HIGH RESISTANCE; LOW RESISTANCE; METAL NANOCRYSTALS; METALLIC ISLANDS; NANOCRYSTAL ARRAYS; NANOCRYSTAL WIRES; ROOM TEMPERATURE RESISTANCE; TUNNEL BARRIER;

ELECTRON BEAMS; ELECTRON OPTICS; NANOWIRES; TEMPERATURE MEASUREMENT;

NANOCRYSTALS;

GOLD NANOPARTICLE; NANOCRYSTAL; NANOWIRE;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRODE; ELECTRON BEAM; ELECTRON TRANSPORT; MICROTECHNOLOGY; MOLECULAR INTERACTION; PARTICLE SIZE; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPE;

EID: 78149231960     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl.2010.0048     Document Type: Article

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