Deposition of passivated gold nanoclusters onto prepatterned substrates

Applied Physics Letters

Volumn 74, Issue 19, 1999, Pages 2833-2835

  Parker, A J ^a   Childs, P A ^a   Palmer, R E ^a   Brust, M ^b  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

NANOSTRUCTURED MATERIALS; PASSIVATION; PHOTORESISTS; SCANNING TUNNELING MICROSCOPY; SILICA; SUBSTRATES; SULFUR COMPOUNDS; TOLUENE;

DECANETHIOLS; GOLD NANOCLUSTERS;

GOLD;

EID: 0032620536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124029     Document Type: Article

References (25)

1. A. J. Hoffman, G. Mills, H. Yee, and M. R. Hoffmann, J. Phys. Chem. 96, 5546 (1992).
2. C. P. Collier, R. J. Saykally, J. J. Shiang, S. E. Henrichs, and J. R. Heath, Science 277, 1978 (1997).
3. Clusters and Colloids, edited by G. Schmid (VCH, Weinheim 1994).
4. G. Markovich, D. V. Leff, S-W. Chung, H. M. Soyez, B. Dunn, and J. R. Heath, Appl. Phys. Lett. 70, 3107 (1997).
5. T. Sato, H. Ahmed, D. Brown, and B. F. G. Johnson, J. Appl. Phys. 82, 696 (1997).
6. G. Schön and U. Simon, Colloid Polym. Sci. 273, 101 (1995).
7. D. L. Klein, R. Roth, A. K. L. Lim, A. P. Alivisatos, and P. L. McEuen, Nature (London) 389, 699 (1997).
8. F. Parmigiani, G. Samoggia, and G. P. Ferraris, J. Appl. Phys. 57, 2524 (1985).
9. I. M. Goldby, B. Vonlssendorff, L. Kuipers, and R. E. Palmer, Rev. Sci. Instrum. 68, 3327 (1997).
10. D. V. Leff, P. C. Ohara, J. R. Heath, and W. M. Gelbart, J. Phys. Chem. 99, 7036 (1995).
11. M. Brust, M. Walker, D. Bethell, D. J. Schiffrin, and R. Whyman, J. Chem. Soc. Chem. Commun. 7, 801 (1994).
12. J. P. Wilcoxon, DOE Patent No. 5,147,841, DOE Control No. S 70621, 15 September 1992.
13. J. Turkevich, P. C. Stevenson, and J. Hillier, Discuss. Faraday Soc. 11, 55 (1951).
14. P. J. Durston, J. Schmidt, R. E. Palmer, and J. P. Wilcoxon, Appl. Phys. Lett. 71, 2940 (1997).
15. P. J. Durston, R. E. Palmer, and J. P. Wilcoxon, Appl. Phys. Lett. 72, 176 (1998).
16. R. G. Osifchin, R. P. Andres, J. I. Henderson, C. P. Kubiak, and R. N. Dominey, Nanotechnology 7, 412 (1996).
17. R. P. Andres, J. D. Bielefeld, J. I. Henderson, D. B. Janes, V. R. Kolagunta, C. P. Kubiak, W. J. Mahoney, and R. G. Osifchin, Science 273, 1690 (1996).
18. T. Vossmeyer, S. Jia, E. Delonno, M. R. Diehl, S.-H. Kim, X. Peng, A. P. Alivisatos, and J. R. Heath, J. Appl. Phys. 84, 3664 (1998).
19. T. Sato, D. G. Hasko, and H. Ahmed, J. Vac. Sci. Technol. B 15, 45 (1997).
20. S. Bandyopadhyay, A. E. Miller, H. C. Chang, G. Banerjee, V. Yuzhakov, D.-F. Yue, R. E. Ricker, S. Jones, J. A. Eastman, E. Baugher, and M. Chandrasekhar, Nanotechnology 7, 360 (1996).
21. W. M. Moreau, Semiconductor Lithography Principles, Practices and Materials (Plenum, New York 1987).
22. P. C. Ohara, D. V. Leff, J. R. Heath, and W. M. Gelbart, Phys. Rev. Lett. 75, 3466 (1998).
23. R. K. Iler, The Chemistry of Silica (Wiley Interscience, New York, 1979).
24. J. Liu, J. C. Barnard, K. Seeger, and R. E. Palmer, Appl. Phys. Lett. 73, 2030 (1998).
25. C. Y. Chang and S. M. Sze, ULSI Technology (McGraw-Hill, New York, 1996).