Enhanced optical output power of tunnel junction GaN-based light emitting diodes with transparent conducting Al and Ga-codoped ZnO thin films

Japanese Journal of Applied Physics

Volumn 49, Issue 9 PART 1, 2010, Pages

  Kim, Tae Hoon ^a   Ju, Young Gu ^b   Park, Lee Soon ^b   Lee, Sang Hern ^c   Baek, Jong Hyeob ^c   Yu, Young Moon ^d  

^a R and D Institute of Lumimicro Co Ltd   (South Korea)

^b Kyungpook National University   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

^d Pukyong National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED ZNO; CONDUCTING LAYERS; EXTERNAL QUANTUM EFFICIENCY; GAN BASED LED; HIGH QUALITY; HIGH TRANSPARENCY; LOW RESISTIVITY; OHMIC BEHAVIOR; OPTICAL OUTPUT POWER; RADIO FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES;

CONDUCTIVE FILMS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS; TUNNEL JUNCTIONS; VAPOR DEPOSITION; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 78049414697     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.091002     Document Type: Article

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