The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 2501-2506

  Uang, Kai Ming ^a   Wang, Shui Jinn ^a   Chen, Shiue Lung ^a   Chen, Tron Min ^a   Liou, Bor Wen ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Gallium nitride; Indium zinc oxide; Light emitting diodes; Reliability

Indexed keywords

GALLIUM NITRIDE; OHMIC CONTACTS; RELIABILITY; THIN FILMS;

INDIUM ZINC OXIDE; INJECTION CURRENT; LIGHT OUTPUT POWER (LOP); OPTIMUM THICKNESS;

LIGHT EMITTING DIODES;

EID: 33750842086     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.171     Document Type: Article

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