High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Bangsaruntip, S ^a   Cohen, G M ^a   Majumdar, A ^a   Zhang, Y ^a   Engelmann, S U ^a   Fuller, N C M ^a   Gignac, L M ^a   Mittal, S ^a   Newbury, J S ^a   Guillorn, M ^a   Barwicz, T ^a   Sekaric, L ^a   Frank, M M ^a   Sleight, J W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT PERFORMANCE; GATE STACKS; GATE-ALL-AROUND; HYDROGEN ANNEALING; MOSFETS; OFF-CURRENT; OXIDATION PROCESS; SHORT-CHANNEL EFFECT; SI NANOWIRE; SILICON NANOWIRE MOSFETS; SUPPLY VOLTAGES; WIRE SIZE;

ELECTRON DEVICES; MOSFET DEVICES; NANOWIRES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952335016     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424364     Document Type: Conference Paper

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