Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 92-93

  Wong, Hoong Shing ^a,b   Tan, Lian Huat ^b   Chan, Lap ^c   Lo, Guo Qiang ^b   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ORIENTATIONS; DOPANT SEGREGATION; EXTERNAL RESISTANCE; GATE-ALL-AROUND; HETEROSTRUCTURES; INJECTION VELOCITY; METAL SEMICONDUCTOR METAL; QUANTUM WIRES;

FIELD EFFECT TRANSISTORS; METALS; NANOWIRES; PHOTODETECTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WIRES; WIRE;

DIELECTRIC RELAXATION;

EID: 71049153733     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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