MOS hydrogen sensor with very fast response based on ultra-thin thermal SiO2 film

International Journal of Hydrogen Energy

Volumn 35, Issue 22, 2010, Pages 12561-12567

  Lu, Chi ^a,b   Chen, Zhi ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

^b NATIONAL INSTITUTE OF BIOMEDICAL IMAGING AND BIOENGINEERING   (United States)

Author keywords

H2 sensor; MOS capacitor; Response time; SiO2 bulk trap; Ultra thin thermal SiO2 film

Indexed keywords

BULK TRAPS; DRY OXIDATION; FAST RESPONSE; GAS DELIVERY SYSTEM; GATE LEAKAGES; H2 SENSOR; HYDROGEN GAS SENSORS; HYDROGEN SENSOR; RESPONSE SPEED; RESPONSE TIME; SHORT RESPONSE TIME; SIGNAL MAGNITUDE; THICK OXIDES; TIME INTERVAL; ULTRA-THIN; WAFER TECHNOLOGY;

CAPACITORS; CHEMICAL SENSORS; HYDROGEN; MOS CAPACITORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

SILICON OXIDES;

EID: 77958152949     PISSN: 03603199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijhydene.2010.08.031     Document Type: Article

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