Spectroscopic ellipsometry investigation of the optical properties of nanostructured Si/ SiNx films

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Keita, A S ^a   Naciri, A En ^a   Delachat, F ^b   Carrada, M ^b   Ferblantier, G ^b   Slaoui, A ^b  

^a UNIVERSITÉ DE LORRAINE   (France)

^b Faculté de Médecine   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; COMPARATIVE STUDIES; DIELECTRIC FUNCTIONS; DISPERSION FORMULAS; ELLIPSOMETRIC DATA; GAS-FLOW RATIO; LORENTZ; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; MODELING METHOD; NANO-STRUCTURED; NUMERICAL INVERSION; PHOTON ENERGY RANGE; SILICON QUANTUM DOTS;

AMMONIA; NUMERICAL METHODS; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICON NITRIDE; SPECTROSCOPIC ELLIPSOMETRY;

AMORPHOUS SILICON;

EID: 77958105367     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3331551     Document Type: Article

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