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Volumn 92, Issue 9, 2008, Pages 1091-1098
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Plasma-enhanced chemical vapour-deposited silicon nitride films; The effect of annealing on optical properties and etch rates
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Author keywords
Annealing; Etch rate; Optical properties; PECVD; Silicon nitride
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Indexed keywords
ANNEALING;
CONCENTRATION (PROCESS);
ETCHING;
SILICON NITRIDE;
ETCH RATE;
SILANE-TO-TOTAL GAS RATIO;
METALLIC FILMS;
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EID: 45049085129
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solmat.2008.03.013 Document Type: Article |
Times cited : (37)
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References (32)
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